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Other articles related with "Schottky diode"：
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17306 |
Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇) |
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Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure |
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Chin. Phys. B
2023 Vol.32 (1): 17306-017306
[Abstract]
(259)
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[PDF 1537 KB]
(116)
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38503 |
Yang Xu(徐阳), Xuanhu Chen(陈选虎), Liang Cheng(程亮), Fang-Fang Ren(任芳芳), Jianjun Zhou(周建军), Song Bai(柏松), Hai Lu(陆海), Shulin Gu(顾书林), Rong Zhang(张荣), Youdou Zheng(郑有炓), Jiandong Ye(叶建东) |
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High performance lateral Schottky diodes based on quasi-degenerated Ga2O3 |
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Chin. Phys. B
2019 Vol.28 (3): 38503-038503
[Abstract]
(744)
[HTML 1 KB]
[PDF 714 KB]
(323)
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27303 |
Jin-Lan Li(李金岚), Yun Li(李赟), Ling Wang(汪玲), Yue Xu(徐跃), Feng Yan(闫锋), Ping Han(韩平), Xiao-Li Ji(纪小丽) |
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Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode |
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Chin. Phys. B
2019 Vol.28 (2): 27303-027303
[Abstract]
(755)
[HTML 1 KB]
[PDF 929 KB]
(304)
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87102 |
Xue-Qian Zhong(仲雪倩), Jue Wang(王珏), Bao-Zhu Wang(王宝柱), Heng-Yu Wang(王珩宇), Qing Guo(郭清), Kuang Sheng(盛况) |
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Investigations on mesa width design for 4H-SiC trench super junction Schottky diodes |
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Chin. Phys. B
2018 Vol.27 (8): 87102-087102
[Abstract]
(836)
[HTML 0 KB]
[PDF 1573 KB]
(284)
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37306 |
Jie Huang(黄杰), Wenwen Gu(顾雯雯), Qian Zhao(赵倩) |
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Broadband microwave frequency doubler based on left-handed nonlinear transmission lines |
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Chin. Phys. B
2017 Vol.26 (3): 37306-037306
[Abstract]
(597)
[HTML 0 KB]
[PDF 853 KB]
(320)
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17201 |
X Z Liu(刘兴钊), C Yue(岳超), C T Xia(夏长泰), W L Zhang(张万里) |
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Characterization of vertical Au/β -Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer |
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Chin. Phys. B
2016 Vol.25 (1): 17201-017201
[Abstract]
(558)
[HTML 1 KB]
[PDF 287 KB]
(823)
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77305 |
Wang Hao (王昊), Chen Xing (陈星), Xu Guang-Hui (许光辉), Huang Ka-Ma (黄卡玛) |
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A novel physical parameter extraction approach for Schottky diodes |
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Chin. Phys. B
2015 Vol.24 (7): 77305-077305
[Abstract]
(647)
[HTML 1 KB]
[PDF 378 KB]
(604)
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77201 |
Zhai Dong-Yuan (翟东媛), Zhu Jun (朱俊), Zhao Yi (赵毅), Cai Yin-Fei (蔡银飞), Shi Yi (施毅), Zheng You-Liao (郑有炓) |
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High performance trench MOS barrier Schottky diode with high-k gate oxide |
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Chin. Phys. B
2015 Vol.24 (7): 77201-077201
[Abstract]
(1053)
[HTML 1 KB]
[PDF 523 KB]
(1173)
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18506 |
Ahmet Kaya, Sedat Zeyrek, Sait Eren San, Şmsettin Altindal |
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Electrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency range |
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Chin. Phys. B
2014 Vol.23 (1): 18506-018506
[Abstract]
(558)
[HTML 1 KB]
[PDF 1510 KB]
(497)
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127307 |
Huang Jie (黄杰), Zhao Qian (赵倩), Yang Hao (杨浩), Dong Jun-Rong (董军荣), Zhang Hai-Ying (张海英) |
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A monolithic distributed phase shifter based on right-handed nonlinear transmission lines at 30 GHz |
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Chin. Phys. B
2013 Vol.22 (12): 127307-127307
[Abstract]
(548)
[HTML 1 KB]
[PDF 406 KB]
(505)
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77102 |
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Gu Guo-Dong (顾国栋), Dun Shao-Bo (敦少博), Yin Jia-Yun (尹甲运), Han Ting-Ting (韩婷婷), Sheng Bai-Cheng (盛百城), Cai Shu-Jun (蔡树军), Liu Bo (刘波), Lin Zhao-Jun (林兆军) |
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Directly extracting both threshold voltage and series resistance from conductance-voltage curve for AlGaN/GaN Schottky diode |
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Chin. Phys. B
2013 Vol.22 (7): 77102-077102
[Abstract]
(835)
[HTML 1 KB]
[PDF 270 KB]
(1487)
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37304 |
Chen Feng-Ping(陈丰平), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Tang Xiao-Yan(汤晓燕), Wang Yue-Hu(王悦湖), and Chen Wen-Hao(陈文豪) |
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Temperature-dependent characteristics of 4H–SiC junction barrier Schottky diodes |
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Chin. Phys. B
2012 Vol.21 (3): 37304-037304
[Abstract]
(1315)
[HTML 1 KB]
[PDF 301 KB]
(1906)
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118401 |
Huang Jian-Hua(黄健华), Lü Hong-Liang(吕红亮), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门),Tang Xiao-Yan(汤晓燕), Chen Feng-Ping(陈丰平), and Song Qing-Wen(宋庆文) |
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Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode |
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Chin. Phys. B
2011 Vol.20 (11): 118401-118401
[Abstract]
(1489)
[HTML 0 KB]
[PDF 304 KB]
(1062)
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97304 |
Ru Guo-Ping(茹国平), Yu Rong(俞融), Jiang Yu-Long(蒋玉龙), and Ruan Gang(阮刚) |
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Thermal activation of current in an inhomogeneous Schottky diode with a Gaussian distribution of barrier height |
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Chin. Phys. B
2010 Vol.19 (9): 97304-097304
[Abstract]
(1432)
[HTML 1 KB]
[PDF 331 KB]
(800)
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97107 |
Chen Feng-Ping(陈丰平), Zhang Yu-Ming(张玉明), Lü Hong-Liang(吕红亮), Zhang Yi-Men(张义门), and Huang Jian-Hua(黄建华) |
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Study of 4H-SiC junction barrier Schottky diode using field guard ring termination |
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Chin. Phys. B
2010 Vol.19 (9): 97107-097107
[Abstract]
(1613)
[HTML 1 KB]
[PDF 2572 KB]
(2292)
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57303 |
Liu Hong-Xia(刘红侠), Wu Xiao-Feng(吴笑峰), Hu Shi-Gang(胡仕刚), and Shi Li-Chun(石立春) |
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Characteristics and parameter extraction for NiGe/n-type Ge Schottky diode with variable annealing temperatures |
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Chin. Phys. B
2010 Vol.19 (5): 57303-057303
[Abstract]
(1368)
[HTML 1 KB]
[PDF 735 KB]
(732)
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5029 |
Li Fei(李菲), Zhang Xiao-Ling(张小玲), Duan Yi(段毅), Xie Xue-Song(谢雪松), and ü Chang-Zhi(吕长志) |
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High-temperature current conduction through three kinds of Schottky diodes |
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Chin. Phys. B
2009 Vol.18 (11): 5029-5033
[Abstract]
(1619)
[HTML 1 KB]
[PDF 712 KB]
(721)
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94 |
Wang Shou-Guo (王守国), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明) |
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Parameter extraction for a Ti/4H-SiC Schottky diode |
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Chin. Phys. B
2003 Vol.12 (1): 94-96
[Abstract]
(1476)
[HTML 1 KB]
[PDF 216 KB]
(621)
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